 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47A DESCRIPTION With TO-3PN package High breakdown voltage Fast switching time APPLICATIONS Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage CHA IN Emitter-base voltage Collector current Base current Base current -peak Collector-emitter voltage GE S N Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 1000 450 7 9 15 3 6 UNIT V V V A A A A W ae ae Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A ;L=25mH IE=50mA ;IC=0 IC=5A; IB=1.0A IC=8A; IB=2.5A IC=5A; IB=1.0A VCE=1000V; VBE=0 TC=125ae VCB=1000V;RBE=10| TC=125ae VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz IC=0 ; VCB=20V;f=0.1MHz 15 MIN 450 7 TYP. BUV47A SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICES ICER IEBO hFE fT COB MAX UNIT V 30 1.5 3.0 1.6 0.15 1.5 0.4 3.0 1 V V V V mA mA mA Transition frquency Output capacitance Switching times resistive load ton ts tf Turn-on time Storage time Fall time HAN INC SEM GE OND IC TOR UC 8 105 1.0 3.0 0.8 50 MHz pF |I |I |I s s s IC=5A; IB1=-IB2=1A VCC=150V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV47A SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
Price & Availability of BUV47A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |